BFP 520F H6327 数据手册
其他文档
未找到其他文档！
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Infineon Technologies BFP 520F H6327
- Transistor Type: NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 50mA
- Power Dissipation (Pd): 120mW
- Transition Frequency (fT): 45GHz
- DC Current Gain (hFE@Ic,Vce): 70@20mA,2V
- Collector Cut-Off Current (Icbo): 200nA
- Collector-Emitter Breakdown Voltage (Vceo): 2.5V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): -
- Package: TSFP-4
- Manufacturer: Infineon Technologies
