دیتاشیت BFP 520F H6327
مشخصات دیتاشیت
| نام دیتاشیت |
BFP 520F H6327
|
| حجم فایل |
62.671
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
Infineon Technologies BFP 520F H6327
-
Transistor Type:
NPN
-
Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
50mA
-
Power Dissipation (Pd):
120mW
-
Transition Frequency (fT):
45GHz
-
DC Current Gain (hFE@Ic,Vce):
70@20mA,2V
-
Collector Cut-Off Current (Icbo):
200nA
-
Collector-Emitter Breakdown Voltage (Vceo):
2.5V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
-
-
Package:
TSFP-4
-
Manufacturer:
Infineon Technologies
